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SK Hynix HMT351R7EFR8C-RD 4GB
Samsung M471A5644EB0-CPB 2GB
比较
SK Hynix HMT351R7EFR8C-RD 4GB vs Samsung M471A5644EB0-CPB 2GB
总分
SK Hynix HMT351R7EFR8C-RD 4GB
总分
Samsung M471A5644EB0-CPB 2GB
差异
规格
评论
差异
需要考虑的原因
SK Hynix HMT351R7EFR8C-RD 4GB
报告一个错误
需要考虑的原因
Samsung M471A5644EB0-CPB 2GB
报告一个错误
低于PassMark测试中的延时,ns
28
37
左右 -32% 更低的延时
更快的读取速度,GB/s
13.2
9.8
测试中的平均数值
更快的写入速度,GB/s
9.1
7.2
测试中的平均数值
更高的内存带宽,mbps
17000
14900
左右 1.14 更高的带宽
规格
完整的技术规格清单
SK Hynix HMT351R7EFR8C-RD 4GB
Samsung M471A5644EB0-CPB 2GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
37
28
读取速度,GB/s
9.8
13.2
写入速度,GB/s
7.2
9.1
内存带宽,mbps
14900
17000
Other
描述
PC3-14900, 1.5V, CAS Supported: 6 7 8 9 10 11 13
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度
9-10-9-28 / 1866 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2065
1989
SK Hynix HMT351R7EFR8C-RD 4GB RAM的比较
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
SK Hynix HMT351R7EFR4A-H9 4GB
Samsung M471A5644EB0-CPB 2GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston 9905403-444.A00LF 4GB
Kingmax Semiconductor GLLF62F-D8---------- 4GB
Kingston HP16D3LS1KBG/8G 8GB
Kingston KTP9W1-MIE 16GB
Samsung M395T2863QZ4-CF76 1GB
Crucial Technology CT16G4SFD8266.M16FRS 16GB
Ramos Technology EEB8GB681CAE-16IC 8GB
Corsair CMW64GX4M4E3200C16 16GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
G Skill Intl F4-3200C14-8GTZRX 8GB
SK Hynix HMT351R7EFR8C-RD 4GB
Samsung M471A5644EB0-CPB 2GB
A-DATA Technology DDR3 1333G 2GB
Kingston KHX3466C16D4/8GX 8GB
A-DATA Technology AD73I1C1674EV 4GB
G Skill Intl F4-3600C17-16GTZR 16GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Aquarius Production Company LLC 16G-D4-2666-MR 4GB
Crucial Technology CT102464BF160B-16F 8GB
Crucial Technology CT16G4DFRA32A.C8FB 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Micron Technology 8ATF1G64AZ-2G1A1 8GB
TwinMOS 8DHE3MN8-HATP 2GB
AMD R748G2400U2S-UO 8GB
Samsung M378B5773DH0-CH9 2GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3200 8GB
A-DATA Technology DOVF1B163G2G 2GB
Corsair CM4X16GC3000C16K8 16GB
报告一个错误
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Bug description
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