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SK Hynix HMT41GS6MFR8C-PB 8GB
Samsung M471B5173EB0-YK0 4GB

SK Hynix HMT41GS6MFR8C-PB 8GB vs Samsung M471B5173EB0-YK0 4GB

总分
star star star star star
SK Hynix HMT41GS6MFR8C-PB 8GB

SK Hynix HMT41GS6MFR8C-PB 8GB

总分
star star star star star
Samsung M471B5173EB0-YK0 4GB

Samsung M471B5173EB0-YK0 4GB

差异 规格 评论

差异

SK Hynix HMT41GS6MFR8C-PB 8GB 需要考虑的原因
SK Hynix HMT41GS6MFR8C-PB 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    43 left arrow 44
    左右 2% 更低的延时
  • 更快的读取速度，GB/s
    13.2 left arrow 13
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.4 left arrow 8.2
    测试中的平均数值
Samsung M471B5173EB0-YK0 4GB 需要考虑的原因
Samsung M471B5173EB0-YK0 4GB
报告一个错误

规格

完整的技术规格清单
SK Hynix HMT41GS6MFR8C-PB 8GB
Samsung M471B5173EB0-YK0 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    43 left arrow 44
  • 读取速度，GB/s
    13.2 left arrow 13.0
  • 写入速度，GB/s
    8.4 left arrow 8.2
  • 内存带宽，mbps
    12800 left arrow 12800
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 9-9-9-24 / 1600 MHz
  • 排名PassMark (越多越好)
    2185 left arrow 2069

SK Hynix HMT41GS6MFR8C-PB 8GB RAM的比较

Samsung M471B5773DH0-CH9 2GB
SK Hynix HMT41GS6AFR8A-PB 8GB

Samsung M471B5173EB0-YK0 4GB RAM的比较

SK Hynix HMT451S6DFR8A-PB 4GB
SK Hynix HMT451S6BFR8A-PB 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston KHX2133C11D3/4GX 4GB
Kingston KHX2133C11D3/4GX 4GB
Corsair CMSX8GX4M1A2400C16 8GB
Corsair CMSX8GX4M1A2400C16 8GB
内存RAM
SK Hynix HMT41GS6MFR8C-PB 8GB
SK Hynix HMT41GS6MFR8C-PB 8GB
Samsung M471B5173EB0-YK0 4GB
Samsung M471B5173EB0-YK0 4GB
内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Crucial Technology BLE4G4D32AEEA.K8FD 4GB
Crucial Technology BLE4G4D32AEEA.K8FD 4GB
内存RAM
G Skill Intl F5-6000J3636F16G 16GB
G Skill Intl F5-6000J3636F16G 16GB
Patriot Memory (PDP Systems) PSD44G213341 4GB
Patriot Memory (PDP Systems) PSD44G213341 4GB
内存RAM
Peak Electronics 256X64M-67E 2GB
Peak Electronics 256X64M-67E 2GB
Crucial Technology BLS8G4D240FSE.16FAR 8GB
Crucial Technology BLS8G4D240FSE.16FAR 8GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
G Skill Intl F4-2666C19-16GRS 16GB
G Skill Intl F4-2666C19-16GRS 16GB
内存RAM
Kingston 9905471-001.A01LF 2GB
Kingston 9905471-001.A01LF 2GB
Micron Technology 16ATF2G64AZ-3G2J1 16GB
Micron Technology 16ATF2G64AZ-3G2J1 16GB
内存RAM
Kingston 9965516-112.A00LF 16GB
Kingston 9965516-112.A00LF 16GB
Mushkin MR[A/B]4U266GHHF8G 8GB
Mushkin MR[A/B]4U266GHHF8G 8GB
内存RAM
Apacer Technology 78.01G86.9H50C 1GB
Apacer Technology 78.01G86.9H50C 1GB
Chun Well Technology Holding Limited D4U0826190B 8GB
Chun Well Technology Holding Limited D4U0826190B 8GB
内存RAM
Kingston 99U5474-028.A00LF 4GB
Kingston 99U5474-028.A00LF 4GB
Crucial Technology CT16G4SFD824A.C16FN 16GB
Crucial Technology CT16G4SFD824A.C16FN 16GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT16G4DFRA32A.C8FB 16GB
Crucial Technology CT16G4DFRA32A.C8FB 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3733C17-4GVK 4GB
G Skill Intl F4-3733C17-4GVK 4GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
Corsair CM4X16GD3200C16K2E 16GB
Corsair CM4X16GD3200C16K2E 16GB
内存RAM
Corsair CM3X2G1600C9 2GB
Corsair CM3X2G1600C9 2GB
Patriot Memory (PDP Systems) 4400 C18 Series 8GB
Patriot Memory (PDP Systems) 4400 C18 Series 8GB
内存RAM