SK Hynix HMT451S6BFR8A-PB 4GB vs Micron Technology 9ASF1G72PZ-2G9E1 8GB

总分

SK Hynix HMT451S6BFR8A-PB 4GB

SK Hynix HMT451S6BFR8A-PB 4GB

总分

Micron Technology 9ASF1G72PZ-2G9E1 8GB

Micron Technology 9ASF1G72PZ-2G9E1 8GB

差异规格评论

差异

SK Hynix HMT451S6BFR8A-PB 4GB

需要考虑的原因
SK Hynix HMT451S6BFR8A-PB 4GB

报告一个错误

低于PassMark测试中的延时，ns

44 54

左右 19% 更低的延时
更快的读取速度，GB/s

12.3 10.4

测试中的平均数值

Micron Technology 9ASF1G72PZ-2G9E1 8GB

需要考虑的原因
Micron Technology 9ASF1G72PZ-2G9E1 8GB

报告一个错误

更快的写入速度，GB/s

8.2 7.8

测试中的平均数值
更高的内存带宽，mbps

23400 12800

左右 1.83 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT451S6BFR8A-PB 4GB

Micron Technology 9ASF1G72PZ-2G9E1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

44 54
读取速度，GB/s

12.3 10.4
写入速度，GB/s

7.8 8.2
内存带宽，mbps

12800 23400

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-23400, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 26
时序/时钟速度

9-9-9-24 / 1600 MHz 19-19-19, 20-20-20, 21-21-21, 22-22-22 / 2933 MHz
排名PassMark (越多越好)

1977 2259

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMK16GX4M2L3000C15 8GB

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SK Hynix HMT451S6BFR8A-PB 4GB

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Micron Technology 9ASF1G72PZ-2G9E1 8GB

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G Skill Intl F4-3600C16-8GTZRC 8GB

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Crucial Technology BL8G30C15U4W.M8FE1 8GB

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Kingston KHX1600C9D3/8G 8GB

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Kingmax Semiconductor FLFE85F-C8KM9 2GB

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Samsung M391B5673FH0-CH9 2GB

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Corsair CMT32GX4M2C3466C16 16GB

Corsair CMT32GX4M2C3466C16 16GB

G Skill Intl F3-2400C11-8GSR 8GB

G Skill Intl F3-2400C11-8GSR 8GB

Crucial Technology BLS4G4D26BFSE.8FB 4GB

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Kingston 99U5403-492.A00LF 8GB

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Zotac Technology Ltd OD48G32S816-ZHC 8GB

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Kingston 9905403-061.A00LF 2GB

Crucial Technology CT16G4DFD824A.C16FDD 16GB

Crucial Technology CT16G4DFD824A.C16FDD 16GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

SanMax Technologies Inc. SMD4-U16G48HD1-29Y 16GB

SanMax Technologies Inc. SMD4-U16G48HD1-29Y 16GB