SK Hynix HYMP125U64CP8-S6 2GB vs Thermaltake Technology Co Ltd RA24D408GX2-3600C18A 8GB

总分

SK Hynix HYMP125U64CP8-S6 2GB

SK Hynix HYMP125U64CP8-S6 2GB

总分

Thermaltake Technology Co Ltd RA24D408GX2-3600C18A 8GB

Thermaltake Technology Co Ltd RA24D408GX2-3600C18A 8GB

差异规格评论

差异

SK Hynix HYMP125U64CP8-S6 2GB

需要考虑的原因
SK Hynix HYMP125U64CP8-S6 2GB

报告一个错误

更快的读取速度，GB/s

5 17.2

测试中的平均数值
更快的写入速度，GB/s

2,381.6 17.1

测试中的平均数值

Thermaltake Technology Co Ltd RA24D408GX2-3600C18A 8GB

需要考虑的原因
Thermaltake Technology Co Ltd RA24D408GX2-3600C18A 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 60

左右 -131% 更低的延时
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP125U64CP8-S6 2GB

Thermaltake Technology Co Ltd RA24D408GX2-3600C18A 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

60 26
读取速度，GB/s

5,082.2 17.2
写入速度，GB/s

2,381.6 17.1
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

925 3757

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Crucial Technology CT8G4SFS824A.M8FJ 8GB

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Kingston 99U5584-007.A00LF 4GB

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Kingston 9905713-019.A00G 4GB

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Samsung M393B1K70CH0-CH9 8GB

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SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB

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Samsung M393B2G70BH0-CH9 16GB

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Kingston KCDT82-MIE 4GB

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G Skill Intl F4-2133C15-8GNT 8GB

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Corsair CMW16GX4M2C3600C18 8GB

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SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

Apacer Technology 78.C1GMM.AUW0C 8GB

Apacer Technology 78.C1GMM.AUW0C 8GB

Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

SK Hynix HMA851U6CJR6N-VK 4GB

SK Hynix HMA851U6CJR6N-VK 4GB

Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

G Skill Intl F4-3200C14-16GFX 16GB

G Skill Intl F4-3200C14-16GFX 16GB

SK Hynix HMA451U6AFR8N-TF 4GB

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Teclast TLD416G26A30 16GB

Teclast TLD416G26A30 16GB