Smart Modular SG564568FG8N6KF-Z2 2GB vs Kingston 99U5700-010.A00G 8GB

总分

Smart Modular SG564568FG8N6KF-Z2 2GB

Smart Modular SG564568FG8N6KF-Z2 2GB

总分

Kingston 99U5700-010.A00G 8GB

Kingston 99U5700-010.A00G 8GB

差异规格评论

差异

Smart Modular SG564568FG8N6KF-Z2 2GB

需要考虑的原因
Smart Modular SG564568FG8N6KF-Z2 2GB

报告一个错误

更快的读取速度，GB/s

4 14.2

测试中的平均数值
更快的写入速度，GB/s

3,071.4 12.3

测试中的平均数值

Kingston 99U5700-010.A00G 8GB

需要考虑的原因
Kingston 99U5700-010.A00G 8GB

报告一个错误

低于PassMark测试中的延时，ns

47 70

左右 -49% 更低的延时
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Smart Modular SG564568FG8N6KF-Z2 2GB

Kingston 99U5700-010.A00G 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

70 47
读取速度，GB/s

4,372.7 14.2
写入速度，GB/s

3,071.4 12.3
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

668 2576

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A

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Kingston ACR16D3LS1NGG/4G 4GB

Crucial Technology BL16G30C15U4R.M16FE1 16GB

Crucial Technology BL16G30C15U4R.M16FE1 16GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F4-3600C16-8GTZSW 8GB

G Skill Intl F4-3600C16-8GTZSW 8GB