STEC (Silicon Tech) S1024R3NN2QK-I 1GB vs InnoDisk Corporation M4C0-AGS1TCSJ 16GB

总分

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

总分

InnoDisk Corporation M4C0-AGS1TCSJ 16GB

InnoDisk Corporation M4C0-AGS1TCSJ 16GB

差异规格评论

差异

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

需要考虑的原因
STEC (Silicon Tech) S1024R3NN2QK-I 1GB

报告一个错误

低于PassMark测试中的延时，ns

63 101

左右 38% 更低的延时
更快的读取速度，GB/s

3 12.1

测试中的平均数值

InnoDisk Corporation M4C0-AGS1TCSJ 16GB

需要考虑的原因
InnoDisk Corporation M4C0-AGS1TCSJ 16GB

报告一个错误

更快的写入速度，GB/s

6.7 1,447.3

测试中的平均数值
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

InnoDisk Corporation M4C0-AGS1TCSJ 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

63 101
读取速度，GB/s

3,231.0 12.1
写入速度，GB/s

1,447.3 6.7
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

478 1382

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

InnoDisk Corporation M4C0-AGS1TCSJ 16GB

InnoDisk Corporation M4C0-AGS1TCSJ 16GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB

Chun Well Technology Holding Limited ND4U1636181DRLDE 1

Kingston 99U5584-004.A00LF 4GB

Kingston 99U5584-004.A00LF 4GB

Kingston 9905734-062.A00G 32GB

Kingston 9905734-062.A00G 32GB

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

Samsung M393A1G40DB0-CPB 8GB

Samsung M393A1G40DB0-CPB 8GB

Strontium EVMT8G1600U86S 8GB

Strontium EVMT8G1600U86S 8GB

Patriot Memory (PDP Systems) PSD432G32002 32GB

Patriot Memory (PDP Systems) PSD432G32002 32GB

Golden Empire CL5-5-5DDR2 1GB

Golden Empire CL5-5-5DDR2 1GB

Panram International Corporation PUD42133C154G2VS 4GB

Panram International Corporation PUD42133C154G2VS 4GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Corsair CMK32GX4M4B3333C16 8GB

Corsair CMK32GX4M4B3333C16 8GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Corsair CMK16GX4M2K4500C19 8GB

Corsair CMK16GX4M2K4500C19 8GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

Kingston CBD32D4S2D8HD-16 16GB

Kingston CBD32D4S2D8HD-16 16GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Samsung M386A4G40DM0-CPB 32GB

Samsung M386A4G40DM0-CPB 32GB

Corsair CMX4GX3M2A1600C9 2GB

Corsair CMX4GX3M2A1600C9 2GB

Corsair CM4X4GD3000C15K4 4GB

Corsair CM4X4GD3000C15K4 4GB

Crucial Technology CT51264BF160BJ.M8F 4GB

Crucial Technology CT51264BF160BJ.M8F 4GB

V-Color Technology Inc. TL48G30S8KSRGB15 8GB

V-Color Technology Inc. TL48G30S8KSRGB15 8GB

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

Crucial Technology BLS8G4D32AESTK.M8FE1 8GB

Crucial Technology BLS8G4D32AESTK.M8FE1 8GB

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

Apacer Technology 78.CAGPN.AZ50C 8GB

Apacer Technology 78.CAGPN.AZ50C 8GB