RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
takeMS International AG TMS2GB264D083805EV 2GB
Gold Key Technology Co Ltd NMUD416E82-4600C 16GB
比较
takeMS International AG TMS2GB264D083805EV 2GB vs Gold Key Technology Co Ltd NMUD416E82-4600C 16GB
总分
takeMS International AG TMS2GB264D083805EV 2GB
总分
Gold Key Technology Co Ltd NMUD416E82-4600C 16GB
差异
规格
评论
差异
需要考虑的原因
takeMS International AG TMS2GB264D083805EV 2GB
报告一个错误
更快的读取速度,GB/s
3
23.1
测试中的平均数值
需要考虑的原因
Gold Key Technology Co Ltd NMUD416E82-4600C 16GB
报告一个错误
低于PassMark测试中的延时,ns
26
50
左右 -92% 更低的延时
更快的写入速度,GB/s
19.0
1,457.4
测试中的平均数值
更高的内存带宽,mbps
21300
6400
左右 3.33 更高的带宽
规格
完整的技术规格清单
takeMS International AG TMS2GB264D083805EV 2GB
Gold Key Technology Co Ltd NMUD416E82-4600C 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
50
26
读取速度,GB/s
3,757.3
23.1
写入速度,GB/s
1,457.4
19.0
内存带宽,mbps
6400
21300
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 3
时序/时钟速度
5-5-5-15 / 800 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
557
4276
takeMS International AG TMS2GB264D083805EV 2GB RAM的比较
Kingston 99P5316-014.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Gold Key Technology Co Ltd NMUD416E82-4600C 16GB RAM的比较
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M3 78T2863EHS-CF7 1GB
Kingston KHX2666C13D4/4GX 4GB
Kingston KHX2800C14D4/8GX 8GB
G Skill Intl F4-4000C17-16GTRGB 16GB
TwinMOS 8DPT5MK8-TATP 2GB
Kingston 9905701-132.A00G 16GB
takeMS International AG TMS2GB264D083805EV 2GB
Gold Key Technology Co Ltd NMUD416E82-4600C 16GB
Elpida EBJ40EG8BFWB-JS-F 4GB
G Skill Intl F4-2133C15-4GRS 4GB
Samsung M4 70T5663CZ3-CE6 2GB
G Skill Intl F4-2400C14-4GRK 4GB
Crucial Technology CT25664AA800.M16FM 2GB
Micron Technology 72ASS8G72LZ-2G6D2 64GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
G Skill Intl F4-2400C17-4GIS 4GB
Kingston 99U5474-028.A00LF 4GB
Micron Technology 8ATF51264AZ-2G1B1 4GB
Nanya Technology NT512T64U88B0BY-3C 512MB
Kingston KHX2133C14D4/8G 8GB
Kingston 99U5403-465.A00LF 8GB
SK Hynix HMA82GR7MFR8N-UH 16GB
Samsung M378B5173BH0-CH9 4GB
Essencore Limited KD4AGU880-32A160X 16GB
Crucial Technology CT25664AA800.M16FM 2GB
Corsair CMR64GX4M4A2666C16 16GB
Kingston KHX2800C14D4/8GX 8GB
Panram International Corporation W4U2666P-8G 8GB
报告一个错误
×
Bug description
Source link