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takeMS International AG TMS2GB264D083805EV 2GB
Mushkin MR[A/B]4U266GHHF16G 16GB
比较
takeMS International AG TMS2GB264D083805EV 2GB vs Mushkin MR[A/B]4U266GHHF16G 16GB
总分
takeMS International AG TMS2GB264D083805EV 2GB
总分
Mushkin MR[A/B]4U266GHHF16G 16GB
差异
规格
评论
差异
需要考虑的原因
takeMS International AG TMS2GB264D083805EV 2GB
报告一个错误
更快的读取速度,GB/s
3
18
测试中的平均数值
需要考虑的原因
Mushkin MR[A/B]4U266GHHF16G 16GB
报告一个错误
低于PassMark测试中的延时,ns
23
50
左右 -117% 更低的延时
更快的写入速度,GB/s
13.1
1,457.4
测试中的平均数值
更高的内存带宽,mbps
17000
6400
左右 2.66 更高的带宽
规格
完整的技术规格清单
takeMS International AG TMS2GB264D083805EV 2GB
Mushkin MR[A/B]4U266GHHF16G 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
50
23
读取速度,GB/s
3,757.3
18.0
写入速度,GB/s
1,457.4
13.1
内存带宽,mbps
6400
17000
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
557
3211
takeMS International AG TMS2GB264D083805EV 2GB RAM的比较
Kingston 99P5316-014.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Mushkin MR[A/B]4U266GHHF16G 16GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M393B2G70BH0-CK0 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
G Skill Intl F3-2133C9-4GAB 4GB
Wilk Elektronik S.A. IRH3200D464L16S/8G 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Crucial Technology CT4G4SFS624A.C4FB 4GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Crucial Technology CT8G4SFS824A.C8FBD1 8GB
SK Hynix HMT151R7TFR4C-H9 4GB
Kingston 9905711-002.A00G 4GB
Team Group Inc. UD5-6400 16GB
G Skill Intl F4-4000C18-8GTZSW 8GB
Kingston 99P5471-004.A01LF 4GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
G Skill Intl F5-6400J3239G16G 16GB
Crucial Technology CT8G4DFS824A.C8FBR1 8GB
Nanya Technology M2F4G64CB8HG5N-CG 4GB
Corsair CM4B16G4J2400A16K2-O 16GB
Kingston 9905458-017.A01LF 4GB
Kingston K9CXF2-MIE 8GB
Hexon Technology Pte Ltd HEXON 1GB
Samsung M471A5644EB0-CPB 2GB
Samsung M393B5170FH0-CK0 4GB
Crucial Technology CT16G4SFD824A.C16FHD 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Transcend Information TS1GLH72V1H 8GB
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Samsung V-GeN D4S4GL30A16TS5 4GB
Nanya Technology M2F4G64CB8HG5N-CG 4GB
A-DATA Technology AO1P21FC8T1-BSKS 8GB
报告一个错误
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Bug description
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