takeMS International AG TMS2GB264D083805EV 2GB vs Wilk Elektronik S.A. IRX3000D464L16S/4G 4GB

总分

takeMS International AG TMS2GB264D083805EV 2GB

takeMS International AG TMS2GB264D083805EV 2GB

总分

Wilk Elektronik S.A. IRX3000D464L16S/4G 4GB

Wilk Elektronik S.A. IRX3000D464L16S/4G 4GB

差异规格评论

差异

takeMS International AG TMS2GB264D083805EV 2GB

需要考虑的原因
takeMS International AG TMS2GB264D083805EV 2GB

报告一个错误

低于PassMark测试中的延时，ns

50 67

左右 25% 更低的延时
更快的读取速度，GB/s

3 16.7

测试中的平均数值

Wilk Elektronik S.A. IRX3000D464L16S/4G 4GB

需要考虑的原因
Wilk Elektronik S.A. IRX3000D464L16S/4G 4GB

报告一个错误

更快的写入速度，GB/s

9.0 1,457.4

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

takeMS International AG TMS2GB264D083805EV 2GB

Wilk Elektronik S.A. IRX3000D464L16S/4G 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

50 67
读取速度，GB/s

3,757.3 16.7
写入速度，GB/s

1,457.4 9.0
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

557 1879

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

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A-DATA Technology DDR4 3200 8GB

A-DATA Technology DDR4 3200 8GB

Samsung M393B1K70CH0-CH9 8GB

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Crucial Technology BL16G26C16U4W.16FD 16GB

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A-DATA Technology VDQVE1B16 2GB

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G Skill Intl F4-3200C16-16GTZKW 16GB

PUSKILL DDR3 1600 8G 8GB

PUSKILL DDR3 1600 8G 8GB

Corsair CMK16GX4M4A2400C16 4GB

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Crucial Technology CT51264BA1339.C16F 4GB

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Transcend Information TS512MSH64V4H 4GB

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AMD R538G1601U2S-UO 8GB

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SK Hynix HMT42GR7AFR4C-RD 16GB

SK Hynix HMT42GR7AFR4C-RD 16GB

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G Skill Intl F4-3466C16-8GTZKW 8GB

Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

Gloway International Co. Ltd. WAR4U2666D19081C 8GB

Gloway International Co. Ltd. WAR4U2666D19081C 8GB

Crucial Technology BLE4G3D1608DE1TX0. 4GB

Crucial Technology BLE4G3D1608DE1TX0. 4GB

Hynix Semiconductor (Hyundai Electronics) HMA82GU6CJR8N-VK 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GU6CJR8N

Micron Technology 8ATF1G64HZ-3G2J1 8GB

Micron Technology 8ATF1G64HZ-3G2J1 8GB

A-DATA Technology DDR4 3200 8GB

A-DATA Technology DDR4 3200 8GB

AMD R538G1601U2S 8GB

AMD R538G1601U2S 8GB

Crucial Technology CT16G4DFD824A.C16FE 16GB

Crucial Technology CT16G4DFD824A.C16FE 16GB