Team Group Inc. UD5-6400 16GB vs Carry Technology Co. Ltd. 4DCC3IOGE-MATP 8GB

总分

Team Group Inc. UD5-6400 16GB

Team Group Inc. UD5-6400 16GB

总分

Carry Technology Co. Ltd. 4DCC3IOGE-MATP 8GB

Carry Technology Co. Ltd. 4DCC3IOGE-MATP 8GB

差异规格评论

差异

Team Group Inc. UD5-6400 16GB

需要考虑的原因
Team Group Inc. UD5-6400 16GB

报告一个错误

低于PassMark测试中的延时，ns

21 23

左右 9% 更低的延时
更快的读取速度，GB/s

15 14.4

测试中的平均数值
更快的写入速度，GB/s

13.9 7.3

测试中的平均数值
更高的内存带宽，mbps

19200 17000

左右 1.13% 更高的带宽

Carry Technology Co. Ltd. 4DCC3IOGE-MATP 8GB

需要考虑的原因
Carry Technology Co. Ltd. 4DCC3IOGE-MATP 8GB

报告一个错误

规格

完整的技术规格清单

Team Group Inc. UD5-6400 16GB

Carry Technology Co. Ltd. 4DCC3IOGE-MATP 8GB

主要特点

存储器类型

DDR5 DDR4
PassMark中的延时，ns

21 23
读取速度，GB/s

15.0 14.4
写入速度，GB/s

13.9 7.3
内存带宽，mbps

19200 17000

Other

描述

PC5-19200, 1.1V, CAS Supported: 22 24 26 28 30 32 34 36 38 40 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

no data / 2400 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

3774 2236

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BL16G36C16U4W.M8FB1 16GB

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Kingston ACR512X64D3S13C9G 4GB

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Crucial Technology CT8G4SFD8213.C16FADP 8GB

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SK Hynix HMA81GS6DJR8N-VK 8GB

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Kingston 9965604-016.C01G 8GB

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G Skill Intl F4-3200C16-4GVRB 4GB

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Hynix Semiconductor (Hyundai Electronics) HMAA4GU6AJR8N-VK 32GB

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Samsung M471B1G73DB0-YK0 8GB

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Crucial Technology BLS8G3N18AES4.16FE 8GB

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Samsung M393B5170FH0-CK0 4GB

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Kingmax Semiconductor GSAG42F-18---------- 8GB

Kingmax Semiconductor GSAG42F-18---------- 8GB

Crucial Technology CT25664BA160B.C16F 2GB

Crucial Technology CT25664BA160B.C16F 2GB

Samsung M471A4G43BB1-CWE 32GB

Samsung M471A4G43BB1-CWE 32GB