TwinMOS 8DHE3MN8-HATP 2GB vs Samsung M393A2G40EB1-CPB 16GB

总分

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

总分

Samsung M393A2G40EB1-CPB 16GB

Samsung M393A2G40EB1-CPB 16GB

差异规格评论

差异

TwinMOS 8DHE3MN8-HATP 2GB

需要考虑的原因
TwinMOS 8DHE3MN8-HATP 2GB

报告一个错误

更快的写入速度，GB/s

870.4 7.7

测试中的平均数值

Samsung M393A2G40EB1-CPB 16GB

需要考虑的原因
Samsung M393A2G40EB1-CPB 16GB

报告一个错误

低于PassMark测试中的延时，ns

56 87

左右 -55% 更低的延时
更快的读取速度，GB/s

9.3 3

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DHE3MN8-HATP 2GB

Samsung M393A2G40EB1-CPB 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

87 56
读取速度，GB/s

3,155.6 9.3
写入速度，GB/s

870.4 7.7
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

417 2200

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 9905702-019.A00G 8GB

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Samsung V-GeN D4S4GL30A16TS5 4GB

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Kingston 99U5474-010.A00LF 2GB

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Kingston KHX3600C17D4/8GX 8GB

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G Skill Intl F4-3600C18-16GTZN 16GB

G Skill Intl F4-3600C18-16GTZN 16GB

Mushkin 996902 2GB

Mushkin 996902 2GB

Corsair CMK16GX4M2D3200C16 8GB

Corsair CMK16GX4M2D3200C16 8GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

Corsair CMW16GX4M2C3200C14 8GB

Corsair CMW16GX4M2C3200C14 8GB

Kingston 99U5474-022.A00LF 2GB

Kingston 99U5474-022.A00LF 2GB

Corsair CMW128GX4M4D3000C16 32GB

Corsair CMW128GX4M4D3000C16 32GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

G Skill Intl F4-2400C15-4GRB 4GB

G Skill Intl F4-2400C15-4GRB 4GB

Kingston 99U5469-045.A00LF 4GB

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Transcend Information JM2666HLB-16G 16GB

Transcend Information JM2666HLB-16G 16GB