Wilk Elektronik S.A. GR1333D364L9/4G 4GB vs Samsung M378A2K43DB1-CVF 16GB

总分

Wilk Elektronik S.A. GR1333D364L9/4G 4GB

Wilk Elektronik S.A. GR1333D364L9/4G 4GB

总分

Samsung M378A2K43DB1-CVF 16GB

Samsung M378A2K43DB1-CVF 16GB

差异规格评论

差异

Wilk Elektronik S.A. GR1333D364L9/4G 4GB

需要考虑的原因
Wilk Elektronik S.A. GR1333D364L9/4G 4GB

报告一个错误

Samsung M378A2K43DB1-CVF 16GB

需要考虑的原因
Samsung M378A2K43DB1-CVF 16GB

报告一个错误

低于PassMark测试中的延时，ns

30 44

左右 -47% 更低的延时
更快的读取速度，GB/s

16.4 10.9

测试中的平均数值
更快的写入速度，GB/s

13.1 7.5

测试中的平均数值
更高的内存带宽，mbps

23400 10600

左右 2.21 更高的带宽

规格

完整的技术规格清单

Wilk Elektronik S.A. GR1333D364L9/4G 4GB

Samsung M378A2K43DB1-CVF 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

44 30
读取速度，GB/s

10.9 16.4
写入速度，GB/s

7.5 13.1
内存带宽，mbps

10600 23400

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-23400, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22
时序/时钟速度

7-7-7-20 / 1333 MHz 19-19-19, 20-20-20, 21-21-21, 22-22-22 / 2933 MHz
排名PassMark (越多越好)

1853 3310

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMD8GX3M2A2933C12 4GB

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Crucial Technology CT51264BD1339.M16F 4GB

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Crucial Technology CT16G4DFD832A.C16FJ 16GB

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Nanya Technology M2N1G64TUH8D5F-AC 1GB

Essencore Limited IM48GU88N24-FFFHAB 8GB

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Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Corsair CMD32GX4M4A2400C12 8GB

Corsair CMD32GX4M4A2400C12 8GB