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A-DATA Technology DQVE1B16 2GB
Samsung M378T5663DZ3-CF7 2GB

A-DATA Technology DQVE1B16 2GB vs Samsung M378T5663DZ3-CF7 2GB

Overall score
star star star star star
A-DATA Technology DQVE1B16 2GB

A-DATA Technology DQVE1B16 2GB

Overall score
star star star star star
Samsung M378T5663DZ3-CF7 2GB

Samsung M378T5663DZ3-CF7 2GB

Differences Specifications Comments

Differences

A-DATA Technology DQVE1B16 2GB Reasons to consider
A-DATA Technology DQVE1B16 2GB
Report a bug
Samsung M378T5663DZ3-CF7 2GB Reasons to consider
Samsung M378T5663DZ3-CF7 2GB
Report a bug
  • Below the latency in the PassMark tests, ns
    52 left arrow 68
    Around -31% lower latency
  • Faster reading speed, GB/s
    5 left arrow 4
    Average value in the tests
  • Faster write speed, GB/s
    2,384.7 left arrow 2,285.0
    Average value in the tests

Specifications

Complete list of technical specifications
A-DATA Technology DQVE1B16 2GB
Samsung M378T5663DZ3-CF7 2GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR2
  • Latency in PassMark, ns
    68 left arrow 52
  • Read speed, GB/s
    4,165.3 left arrow 5,635.1
  • Write speed, GB/s
    2,285.0 left arrow 2,384.7
  • Memory bandwidth, mbps
    6400 left arrow 6400
Other
  • Description
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
  • Timings / Clock speed
    5-5-5-15 / 800 MHz left arrow 5-5-5-15 / 800 MHz
  • Ranking PassMark (The more the better)
    784 left arrow 1037

A-DATA Technology DQVE1B16 2GB RAM comparisons

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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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