RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
ASint Technology SSZ302G08-GGNHC 2GB
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-PB 4GB
Compare
ASint Technology SSZ302G08-GGNHC 2GB vs Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-PB 4GB
Overall score
ASint Technology SSZ302G08-GGNHC 2GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-PB 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
ASint Technology SSZ302G08-GGNHC 2GB
Report a bug
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-PB 4GB
Report a bug
Below the latency in the PassMark tests, ns
28
95
Around -239% lower latency
Faster reading speed, GB/s
11.8
4.2
Average value in the tests
Faster write speed, GB/s
7.9
3.1
Average value in the tests
Specifications
Complete list of technical specifications
ASint Technology SSZ302G08-GGNHC 2GB
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-PB 4GB
Main characteristics
Memory type
DDR3
DDR3
Latency in PassMark, ns
95
28
Read speed, GB/s
4.2
11.8
Write speed, GB/s
3.1
7.9
Memory bandwidth, mbps
12800
12800
Other
Description
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
Timings / Clock speed
9-9-9-24 / 1600 MHz
9-9-9-24 / 1600 MHz
Ranking PassMark (The more the better)
635
1920
ASint Technology SSZ302G08-GGNHC 2GB RAM comparisons
Ramaxel Technology RMT3170MN68F9F1600 4GB
Samsung M378A5244CB0-CRC 4GB
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-PB 4GB RAM comparisons
Samsung M471B5173QH0-YK0 4GB
SK Hynix HMT351S6CFR8C-PB 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
G Skill Intl F3-1333C9-4GIS 4GB
Corsair CM4X4GF2666Z16K4 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
InnoDisk Corporation M4S0-4GSSNCIK 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMW64GX4M2E3200C16 32GB
takeMS International AG TMS2GB264D082-805G 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M378B5273DH0-CH9 4GB
SK Hynix HMA82GR7AFR4N-TF 16GB
Corsair CM3X8GA2400C11Y2R 8GB
Kingston 9905630-018.A00G 8GB
Samsung M471B5173QH0-YK0 4GB
Crucial Technology BLS4G4D240FSB.8FARG 4GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Super Talent F24EB8GS 8GB
Kingston KF552C40-16 16GB
Gloway International (HK) STK4U2400D17081C 8GB
Samsung M393B5170FH0-CK0 4GB
Kingston KHX3200C18D4/4G 4GB
SK Hynix HMT351U6CFR8C-H9 4GB
Samsung M378A2K43EB1-CWE 16GB
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F4-3466C16-8GTZ 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Micron Technology 16ATF2G64HZ-2G1A1 16GB
Ramaxel Technology RMT3020EC58E9F1333 4GB
G Skill Intl F4-3200C16-16GTZ 16GB
Report a bug
×
Bug description
Source link