Elpida EBJ21UE8BDS0-DJ-F 2GB
Hynix Semiconductor (Hyundai Electronics) HMT125S6TFR8C-G7 2GB

Elpida EBJ21UE8BDS0-DJ-F 2GB vs Hynix Semiconductor (Hyundai Electronics) HMT125S6TFR8C-G7 2GB

Overall score
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Elpida EBJ21UE8BDS0-DJ-F 2GB

Elpida EBJ21UE8BDS0-DJ-F 2GB

Overall score
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMT125S6TFR8C-G7 2GB

Hynix Semiconductor (Hyundai Electronics) HMT125S6TFR8C-G7 2GB

Differences

  • Faster write speed, GB/s
    6.7 left arrow 5.3
    Average value in the tests
  • Higher memory bandwidth, mbps
    10600 left arrow 8500
    Around 1.25% higher bandwidth
  • Below the latency in the PassMark tests, ns
    29 left arrow 30
    Around -3% lower latency
  • Faster reading speed, GB/s
    8.9 left arrow 8.6
    Average value in the tests

Specifications

Complete list of technical specifications
Elpida EBJ21UE8BDS0-DJ-F 2GB
Hynix Semiconductor (Hyundai Electronics) HMT125S6TFR8C-G7 2GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR3
  • Latency in PassMark, ns
    30 left arrow 29
  • Read speed, GB/s
    8.6 left arrow 8.9
  • Write speed, GB/s
    6.7 left arrow 5.3
  • Memory bandwidth, mbps
    10600 left arrow 8500
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC3-8500, 1.5V, CAS Supported: 5 6 7 8
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 7-7-7-20 / 1066 MHz
  • Ranking PassMark (The more the better)
    1241 left arrow 1178
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2

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