Hynix Semiconductor (Hyundai Electronics) HMT125S6TFR8C-G7 2GB
Nanya Technology NT2GC64B88B0NS-CG 2GB

Hynix Semiconductor (Hyundai Electronics) HMT125S6TFR8C-G7 2GB vs Nanya Technology NT2GC64B88B0NS-CG 2GB

Overall score
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Hynix Semiconductor (Hyundai Electronics) HMT125S6TFR8C-G7 2GB

Hynix Semiconductor (Hyundai Electronics) HMT125S6TFR8C-G7 2GB

Overall score
star star star star star
Nanya Technology NT2GC64B88B0NS-CG 2GB

Nanya Technology NT2GC64B88B0NS-CG 2GB

Differences

  • Below the latency in the PassMark tests, ns
    29 left arrow 43
    Around 33% lower latency
  • Faster reading speed, GB/s
    11.1 left arrow 8.9
    Average value in the tests
  • Faster write speed, GB/s
    7.3 left arrow 5.3
    Average value in the tests
  • Higher memory bandwidth, mbps
    10600 left arrow 8500
    Around 1.25 higher bandwidth

Specifications

Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT125S6TFR8C-G7 2GB
Nanya Technology NT2GC64B88B0NS-CG 2GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR3
  • Latency in PassMark, ns
    29 left arrow 43
  • Read speed, GB/s
    8.9 left arrow 11.1
  • Write speed, GB/s
    5.3 left arrow 7.3
  • Memory bandwidth, mbps
    8500 left arrow 10600
Other
  • Description
    PC3-8500, 1.5V, CAS Supported: 5 6 7 8 left arrow PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
  • Timings / Clock speed
    7-7-7-20 / 1066 MHz left arrow 7-7-7-20 / 1333 MHz
  • Ranking PassMark (The more the better)
    1178 left arrow 1357
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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