RAM comparison Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB vs Micron Technology 16GB 2133MHz DIMM 16GB

Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB vs Micron Technology 16GB 2133MHz DIMM 16GB

Overall score

Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

Overall score

Differences Specifications Comments

Reasons to consider
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

Higher memory bandwidth, mbps

19200 17000

Around 1.13% higher bandwidth

Reasons to consider
Micron Technology 16GB 2133MHz DIMM 16GB

Complete list of technical specifications

Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

Micron Technology 16GB 2133MHz DIMM 16GB

Main characteristics

Other

Description

PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
Timings / Clock speed

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)

2808 3233

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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