Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Micron Technology 16GB 2133MHz DIMM 16GB

Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB vs Micron Technology 16GB 2133MHz DIMM 16GB

Overall score
star star star star star
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

Overall score
star star star star star
Micron Technology 16GB 2133MHz DIMM 16GB

Micron Technology 16GB 2133MHz DIMM 16GB

Differences

  • Higher memory bandwidth, mbps
    19200 left arrow 17000
    Around 1.13% higher bandwidth
  • Below the latency in the PassMark tests, ns
    23 left arrow 37
    Around -61% lower latency
  • Faster reading speed, GB/s
    17.3 left arrow 16
    Average value in the tests
  • Faster write speed, GB/s
    13.2 left arrow 12.6
    Average value in the tests

Specifications

Complete list of technical specifications
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Micron Technology 16GB 2133MHz DIMM 16GB
Main characteristics
  • Memory type
    DDR4 left arrow DDR4
  • Latency in PassMark, ns
    37 left arrow 23
  • Read speed, GB/s
    16.0 left arrow 17.3
  • Write speed, GB/s
    12.6 left arrow 13.2
  • Memory bandwidth, mbps
    19200 left arrow 17000
Other
  • Description
    PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • Timings / Clock speed
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    2808 left arrow 3233
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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