RAM comparison Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB vs Samsung M378A1G44AB0-CWE 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB vs Samsung M378A1G44AB0-CWE 8GB

Overall score

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

Overall score

Differences Specifications Comments

Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

Reasons to consider
Samsung M378A1G44AB0-CWE 8GB

Faster reading speed, GB/s

16.5 9.8

Average value in the tests
Faster write speed, GB/s

10.9 7.9

Average value in the tests
Higher memory bandwidth, mbps

25600 17000

Around 1.51 higher bandwidth

Complete list of technical specifications

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

Samsung M378A1G44AB0-CWE 8GB

Main characteristics

Other

Description

PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
Timings / Clock speed

14-14-14, 15-15-15, 16-16-16 / 2133 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)

2126 2829

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

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