RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB
Samsung M378A1G44AB0-CWE 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB vs Samsung M378A1G44AB0-CWE 8GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

总分
star star star star star
Samsung M378A1G44AB0-CWE 8GB

Samsung M378A1G44AB0-CWE 8GB

差异 规格 评论

差异

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    35 left arrow 38
    左右 8% 更低的延时
Samsung M378A1G44AB0-CWE 8GB 需要考虑的原因
Samsung M378A1G44AB0-CWE 8GB
报告一个错误
  • 更快的读取速度，GB/s
    16.5 left arrow 9.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.9 left arrow 7.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 17000
    左右 1.51 更高的带宽

规格

完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB
Samsung M378A1G44AB0-CWE 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    35 left arrow 38
  • 读取速度，GB/s
    9.8 left arrow 16.5
  • 写入速度，GB/s
    7.9 left arrow 10.9
  • 内存带宽，mbps
    17000 left arrow 25600
Other
  • 描述
    PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • 时序/时钟速度
    14-14-14, 15-15-15, 16-16-16 / 2133 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    2126 left arrow 2829

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB RAM的比较

TwinMOS 8DHE3MN8-HATP 2GB
Corsair CMK16GX4M2K4266C16 8GB

Samsung M378A1G44AB0-CWE 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M3 93T5750CZA-CE6 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

SK Hynix HMA81GS6CJR8N-VK 8GB
SK Hynix HMA81GS6CJR8N-VK 8GB
Crucial Technology CT2K102464BD160B 8GB
Crucial Technology CT2K102464BD160B 8GB
内存RAM
Kingston 9905403-011.A03LF 2GB
Kingston 9905403-011.A03LF 2GB
G Skill Intl F4-4000C18-32GTZN 32GB
G Skill Intl F4-4000C18-32GTZN 32GB
内存RAM
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
Essencore Limited KD4AGU880-32A160X 16GB
Essencore Limited KD4AGU880-32A160X 16GB
内存RAM
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Crucial Technology CT8G4DFS8266.K8FB 8GB
Crucial Technology CT8G4DFS8266.K8FB 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N
Samsung M378A1G44AB0-CWE 8GB
Samsung M378A1G44AB0-CWE 8GB
内存RAM
G Skill Intl F4-4000C14-16GTZR 16GB
G Skill Intl F4-4000C14-16GTZR 16GB
Team Group Inc. DDR4 2800 8GB
Team Group Inc. DDR4 2800 8GB
内存RAM
Kingston 99U5471-040.A00LF 8GB
Kingston 99U5471-040.A00LF 8GB
Kingston 9905471-073.A00LF 8GB
Kingston 9905471-073.A00LF 8GB
内存RAM
AMD R5S38G1601U2S 8GB
AMD R5S38G1601U2S 8GB
Kingston XK2M26-MIE 16GB
Kingston XK2M26-MIE 16GB
内存RAM
Apacer Technology 78.A1GA0.9L4 2GB
Apacer Technology 78.A1GA0.9L4 2GB
PUSKILL PJ8TFK1GM8 8GB
PUSKILL PJ8TFK1GM8 8GB
内存RAM
Samsung M3 78T2863EHS-CF7 1GB
Samsung M3 78T2863EHS-CF7 1GB
Samsung M378A4G43AB2-CVF 32GB
Samsung M378A4G43AB2-CVF 32GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Crucial Technology BLS4G4D240FSB.8FBD 4GB
Crucial Technology BLS4G4D240FSB.8FBD 4GB
内存RAM
Kingston KHX1866C10D3/4G 4GB
Kingston KHX1866C10D3/4G 4GB
Corsair CMK16GX4M2C3600C20 8GB
Corsair CMK16GX4M2C3600C20 8GB
内存RAM
Corsair CML8GX3M2A1600C9 4GB
Corsair CML8GX3M2A1600C9 4GB
G Skill Intl F4-4133C19-8GTZKWC 8GB
G Skill Intl F4-4133C19-8GTZKWC 8GB
内存RAM
Smart Modular SG564568FG8N6KF-Z2 2GB
Smart Modular SG564568FG8N6KF-Z2 2GB
G Skill Intl F4-4800C19-8GTZRC 8GB
G Skill Intl F4-4800C19-8GTZRC 8GB
内存RAM