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Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB
Samsung M393B2G70DB0-CK0 16GB
Compare
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB vs Samsung M393B2G70DB0-CK0 16GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB
Overall score
Samsung M393B2G70DB0-CK0 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB
Report a bug
Higher memory bandwidth, mbps
17000
12800
Around 1.33% higher bandwidth
Reasons to consider
Samsung M393B2G70DB0-CK0 16GB
Report a bug
Below the latency in the PassMark tests, ns
31
35
Around -13% lower latency
Faster reading speed, GB/s
10.1
9.8
Average value in the tests
Faster write speed, GB/s
10.0
7.9
Average value in the tests
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB
Samsung M393B2G70DB0-CK0 16GB
Main characteristics
Memory type
DDR4
DDR3
Latency in PassMark, ns
35
31
Read speed, GB/s
9.8
10.1
Write speed, GB/s
7.9
10.0
Memory bandwidth, mbps
17000
12800
Other
Description
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
Timings / Clock speed
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
9-9-9-24 / 1600 MHz
Ranking PassMark (The more the better)
2126
2326
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB RAM comparisons
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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