Nanya Technology NT8GA64D88AX3S-HR 8GB
Hynix Semiconductor (Hyundai Electronics) HMT31GR7BFR4C-H9 8GB

Nanya Technology NT8GA64D88AX3S-HR 8GB vs Hynix Semiconductor (Hyundai Electronics) HMT31GR7BFR4C-H9 8GB

Overall score
star star star star star
Nanya Technology NT8GA64D88AX3S-HR 8GB

Nanya Technology NT8GA64D88AX3S-HR 8GB

Overall score
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMT31GR7BFR4C-H9 8GB

Hynix Semiconductor (Hyundai Electronics) HMT31GR7BFR4C-H9 8GB

Differences

  • Higher memory bandwidth, mbps
    21300 left arrow 10600
    Around 2.01% higher bandwidth
  • Below the latency in the PassMark tests, ns
    34 left arrow 96
    Around -182% lower latency
  • Faster reading speed, GB/s
    9.6 left arrow 6.8
    Average value in the tests
  • Faster write speed, GB/s
    7.6 left arrow 4.2
    Average value in the tests

Specifications

Complete list of technical specifications
Nanya Technology NT8GA64D88AX3S-HR 8GB
Hynix Semiconductor (Hyundai Electronics) HMT31GR7BFR4C-H9 8GB
Main characteristics
  • Memory type
    DDR4 left arrow DDR3
  • Latency in PassMark, ns
    96 left arrow 34
  • Read speed, GB/s
    6.8 left arrow 9.6
  • Write speed, GB/s
    4.2 left arrow 7.6
  • Memory bandwidth, mbps
    21300 left arrow 10600
Other
  • Description
    PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 left arrow PC3-10600, 1.5V, CAS Supported: 6 7 8 9
  • Timings / Clock speed
    17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz left arrow 7-7-7-20 / 1333 MHz
  • Ranking PassMark (The more the better)
    992 left arrow 2050
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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