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Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB
Samsung M474A1G43DB0-CPB 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB vs Samsung M474A1G43DB0-CPB 8GB

Overall score
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

Overall score
star star star star star
Samsung M474A1G43DB0-CPB 8GB

Samsung M474A1G43DB0-CPB 8GB

Differences Specifications Comments

Differences

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB
Report a bug
  • Faster reading speed, GB/s
    9.8 left arrow 9.7
    Average value in the tests
  • Faster write speed, GB/s
    7.9 left arrow 6.8
    Average value in the tests
Samsung M474A1G43DB0-CPB 8GB Reasons to consider
Samsung M474A1G43DB0-CPB 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    27 left arrow 35
    Around -30% lower latency

Specifications

Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB
Samsung M474A1G43DB0-CPB 8GB
Main characteristics
  • Memory type
    DDR4 left arrow DDR4
  • Latency in PassMark, ns
    35 left arrow 27
  • Read speed, GB/s
    9.8 left arrow 9.7
  • Write speed, GB/s
    7.9 left arrow 6.8
  • Memory bandwidth, mbps
    17000 left arrow 17000
Other
  • Description
    PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • Timings / Clock speed
    14-14-14, 15-15-15, 16-16-16 / 2133 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    2126 left arrow 1767

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB RAM comparisons

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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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