Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB vs Samsung M474A1G43DB0-CPB 8GB

总分

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

总分

Samsung M474A1G43DB0-CPB 8GB

Samsung M474A1G43DB0-CPB 8GB

差异规格评论

差异

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

报告一个错误

更快的读取速度，GB/s

9.8 9.7

测试中的平均数值
更快的写入速度，GB/s

7.9 6.8

测试中的平均数值

Samsung M474A1G43DB0-CPB 8GB

需要考虑的原因
Samsung M474A1G43DB0-CPB 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 35

左右 -30% 更低的延时

规格

完整的技术规格清单

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

Samsung M474A1G43DB0-CPB 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

35 27
读取速度，GB/s

9.8 9.7
写入速度，GB/s

7.9 6.8
内存带宽，mbps

17000 17000

Other

描述

PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

14-14-14, 15-15-15, 16-16-16 / 2133 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2126 1767

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston K1N7HK-ELC 2GB

Kingston K1N7HK-ELC 2GB

Corsair CMK16GX4M2D3600C16 8GB

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SK Hynix HMA81GS6CJR8N-UH 8GB