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Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB
Micron Technology 18ASF1G72PZ-2G3B1 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB vs Micron Technology 18ASF1G72PZ-2G3B1 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB
Overall score
Micron Technology 18ASF1G72PZ-2G3B1 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB
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Below the latency in the PassMark tests, ns
34
45
Around 24% lower latency
Higher memory bandwidth, mbps
10600
1900
Around 5.58% higher bandwidth
Reasons to consider
Micron Technology 18ASF1G72PZ-2G3B1 8GB
Report a bug
Faster reading speed, GB/s
11.7
8.6
Average value in the tests
Faster write speed, GB/s
8.4
5.8
Average value in the tests
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB
Micron Technology 18ASF1G72PZ-2G3B1 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
34
45
Read speed, GB/s
8.6
11.7
Write speed, GB/s
5.8
8.4
Memory bandwidth, mbps
10600
1900
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-1900, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
7-7-7-20 / 1333 MHz
no data
Ranking PassMark (The more the better)
1682
2387
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB RAM comparisons
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
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Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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