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Micron Technology 16KTF51264HZ-1G6M1 4GB
Samsung M471B5173DB0-YK0 4GB

Micron Technology 16KTF51264HZ-1G6M1 4GB vs Samsung M471B5173DB0-YK0 4GB

Overall score
star star star star star
Micron Technology 16KTF51264HZ-1G6M1 4GB

Micron Technology 16KTF51264HZ-1G6M1 4GB

Overall score
star star star star star
Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

Differences Specifications Comments

Differences

Micron Technology 16KTF51264HZ-1G6M1 4GB Reasons to consider
Micron Technology 16KTF51264HZ-1G6M1 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    43 left arrow 45
    Around 4% lower latency
Samsung M471B5173DB0-YK0 4GB Reasons to consider
Samsung M471B5173DB0-YK0 4GB
Report a bug
  • Faster reading speed, GB/s
    12 left arrow 10.6
    Average value in the tests
  • Faster write speed, GB/s
    7.8 left arrow 6.9
    Average value in the tests

Specifications

Complete list of technical specifications
Micron Technology 16KTF51264HZ-1G6M1 4GB
Samsung M471B5173DB0-YK0 4GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR3
  • Latency in PassMark, ns
    43 left arrow 45
  • Read speed, GB/s
    10.6 left arrow 12.0
  • Write speed, GB/s
    6.9 left arrow 7.8
  • Memory bandwidth, mbps
    12800 left arrow 12800
Other
  • Description
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 9-9-9-24 / 1600 MHz
  • Ranking PassMark (The more the better)
    1647 left arrow 1939

Micron Technology 16KTF51264HZ-1G6M1 4GB RAM comparisons

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Essencore Limited KD4AGU880-36A180C 16GB

Samsung M471B5173DB0-YK0 4GB RAM comparisons

Samsung M471B1G73QH0-YK0 8GB
Kingston KF2666C15S4/16G 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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