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Samsung 36HTF51272PZ-800H1 4GB
Micron Technology 36ASF4G72LZ-2G3A1 32GB

Samsung 36HTF51272PZ-800H1 4GB vs Micron Technology 36ASF4G72LZ-2G3A1 32GB

Overall score
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Samsung 36HTF51272PZ-800H1 4GB

Samsung 36HTF51272PZ-800H1 4GB

Overall score
star star star star star
Micron Technology 36ASF4G72LZ-2G3A1 32GB

Micron Technology 36ASF4G72LZ-2G3A1 32GB

Differences Specifications Comments

Differences

Samsung 36HTF51272PZ-800H1 4GB Reasons to consider
Samsung 36HTF51272PZ-800H1 4GB
Report a bug
  • Faster reading speed, GB/s
    4 left arrow 11.2
    Average value in the tests
Micron Technology 36ASF4G72LZ-2G3A1 32GB Reasons to consider
Micron Technology 36ASF4G72LZ-2G3A1 32GB
Report a bug
  • Below the latency in the PassMark tests, ns
    33 left arrow 70
    Around -112% lower latency
  • Faster write speed, GB/s
    8.2 left arrow 2,924.1
    Average value in the tests
  • Higher memory bandwidth, mbps
    19200 left arrow 5600
    Around 3.43 higher bandwidth

Specifications

Complete list of technical specifications
Samsung 36HTF51272PZ-800H1 4GB
Micron Technology 36ASF4G72LZ-2G3A1 32GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    70 left arrow 33
  • Read speed, GB/s
    4,318.9 left arrow 11.2
  • Write speed, GB/s
    2,924.1 left arrow 8.2
  • Memory bandwidth, mbps
    5600 left arrow 19200
Other
  • Description
    PC2-5600, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • Timings / Clock speed
    no data left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    813 left arrow 2284

Samsung 36HTF51272PZ-800H1 4GB RAM comparisons

Kingston KVR800D2N6/2G 2GB
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Micron Technology 36ASF4G72LZ-2G3A1 32GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

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