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Samsung M323R2GA3BB0-CQKOD 16GB
HT Micron HTH5AN8G8NCJR-VKD 8GB

Samsung M323R2GA3BB0-CQKOD 16GB vs HT Micron HTH5AN8G8NCJR-VKD 8GB

Overall score
star star star star star
Samsung M323R2GA3BB0-CQKOD 16GB

Samsung M323R2GA3BB0-CQKOD 16GB

Overall score
star star star star star
HT Micron HTH5AN8G8NCJR-VKD 8GB

HT Micron HTH5AN8G8NCJR-VKD 8GB

Differences Specifications Comments

Differences

Samsung M323R2GA3BB0-CQKOD 16GB Reasons to consider
Samsung M323R2GA3BB0-CQKOD 16GB
Report a bug
  • Below the latency in the PassMark tests, ns
    25 left arrow 31
    Around 19% lower latency
  • Faster write speed, GB/s
    12.1 left arrow 9.5
    Average value in the tests
HT Micron HTH5AN8G8NCJR-VKD 8GB Reasons to consider
HT Micron HTH5AN8G8NCJR-VKD 8GB
Report a bug
  • Faster reading speed, GB/s
    15.7 left arrow 13.4
    Average value in the tests
  • Higher memory bandwidth, mbps
    21300 left arrow 19200
    Around 1.11 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M323R2GA3BB0-CQKOD 16GB
HT Micron HTH5AN8G8NCJR-VKD 8GB
Main characteristics
  • Memory type
    DDR5 left arrow DDR4
  • Latency in PassMark, ns
    25 left arrow 31
  • Read speed, GB/s
    13.4 left arrow 15.7
  • Write speed, GB/s
    12.1 left arrow 9.5
  • Memory bandwidth, mbps
    19200 left arrow 21300
Other
  • Description
    PC5-19200, 1.1V, CAS Supported: 22 26 28 30 32 36 40 42 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • Timings / Clock speed
    no data / 2400 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • Ranking PassMark (The more the better)
    3419 left arrow 2713

Samsung M323R2GA3BB0-CQKOD 16GB RAM comparisons

Micron Technology 36ASF2G72PZ-2G1A2 16GB
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HT Micron HTH5AN8G8NCJR-VKD 8GB RAM comparisons

STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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