Samsung M378A1K43EB2-CWE 8GB
Micron Technology 18ASF1G72PZ-2G3B1 8GB

Samsung M378A1K43EB2-CWE 8GB vs Micron Technology 18ASF1G72PZ-2G3B1 8GB

Overall score
star star star star star
Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

Overall score
star star star star star
Micron Technology 18ASF1G72PZ-2G3B1 8GB

Micron Technology 18ASF1G72PZ-2G3B1 8GB

Differences

  • Below the latency in the PassMark tests, ns
    33 left arrow 45
    Around 27% lower latency
  • Faster reading speed, GB/s
    17.6 left arrow 11.7
    Average value in the tests
  • Faster write speed, GB/s
    12.0 left arrow 8.4
    Average value in the tests
  • Higher memory bandwidth, mbps
    25600 left arrow 1900
    Around 13.47% higher bandwidth

Specifications

Complete list of technical specifications
Samsung M378A1K43EB2-CWE 8GB
Micron Technology 18ASF1G72PZ-2G3B1 8GB
Main characteristics
  • Memory type
    DDR4 left arrow DDR4
  • Latency in PassMark, ns
    33 left arrow 45
  • Read speed, GB/s
    17.6 left arrow 11.7
  • Write speed, GB/s
    12.0 left arrow 8.4
  • Memory bandwidth, mbps
    25600 left arrow 1900
Other
  • Description
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 left arrow PC4-1900, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • Timings / Clock speed
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow no data
  • Ranking PassMark (The more the better)
    2910 left arrow 2387
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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