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Samsung M378B5173BH0-CH9 4GB
Hynix Semiconductor (Hyundai Electronics) HMT351U6CFR8C-H9 4GB
Compare
Samsung M378B5173BH0-CH9 4GB vs Hynix Semiconductor (Hyundai Electronics) HMT351U6CFR8C-H9 4GB
Overall score
Samsung M378B5173BH0-CH9 4GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMT351U6CFR8C-H9 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M378B5173BH0-CH9 4GB
Report a bug
Below the latency in the PassMark tests, ns
23
26
Around 12% lower latency
Faster reading speed, GB/s
13.4
12.8
Average value in the tests
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT351U6CFR8C-H9 4GB
Report a bug
Faster write speed, GB/s
8.3
8.0
Average value in the tests
Specifications
Complete list of technical specifications
Samsung M378B5173BH0-CH9 4GB
Hynix Semiconductor (Hyundai Electronics) HMT351U6CFR8C-H9 4GB
Main characteristics
Memory type
DDR3
DDR3
Latency in PassMark, ns
23
26
Read speed, GB/s
13.4
12.8
Write speed, GB/s
8.0
8.3
Memory bandwidth, mbps
10600
10600
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC3-10600, 1.5V, CAS Supported: 6 7 8 9 10
Timings / Clock speed
7-7-7-20 / 1333 MHz
7-7-7-20 / 1333 MHz
Ranking PassMark (The more the better)
2269
2186
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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