Samsung M378B5173BH0-CH9 4GB vs Hynix Semiconductor (Hyundai Electronics) HMT351U6CFR8C-H9 4GB

总分

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

总分

Hynix Semiconductor (Hyundai Electronics) HMT351U6CFR8C-H9 4GB

Hynix Semiconductor (Hyundai Electronics) HMT351U6CFR8C-H9 4GB

差异规格评论

差异

Samsung M378B5173BH0-CH9 4GB

需要考虑的原因
Samsung M378B5173BH0-CH9 4GB

报告一个错误

低于PassMark测试中的延时，ns

23 26

左右 12% 更低的延时
更快的读取速度，GB/s

13.4 12.8

测试中的平均数值

Hynix Semiconductor (Hyundai Electronics) HMT351U6CFR8C-H9 4GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT351U6CFR8C-H9 4GB

报告一个错误

更快的写入速度，GB/s

8.3 8.0

测试中的平均数值

规格

完整的技术规格清单

Samsung M378B5173BH0-CH9 4GB

Hynix Semiconductor (Hyundai Electronics) HMT351U6CFR8C-H9 4GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

23 26
读取速度，GB/s

13.4 12.8
写入速度，GB/s

8.0 8.3
内存带宽，mbps

10600 10600

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC3-10600, 1.5V, CAS Supported: 6 7 8 9 10
时序/时钟速度

7-7-7-20 / 1333 MHz 7-7-7-20 / 1333 MHz
排名PassMark (越多越好)

2269 2186

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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