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Samsung M378B5173QH0-CK0 4GB
Hynix Semiconductor (Hyundai Electronics) HMT451U6AFR8A-PB 4GB

Samsung M378B5173QH0-CK0 4GB vs Hynix Semiconductor (Hyundai Electronics) HMT451U6AFR8A-PB 4GB

Overall score
star star star star star
Samsung M378B5173QH0-CK0 4GB

Samsung M378B5173QH0-CK0 4GB

Overall score
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMT451U6AFR8A-PB 4GB

Hynix Semiconductor (Hyundai Electronics) HMT451U6AFR8A-PB 4GB

Differences Specifications Comments

Differences

Samsung M378B5173QH0-CK0 4GB Reasons to consider
Samsung M378B5173QH0-CK0 4GB
Report a bug
  • Faster reading speed, GB/s
    13.9 left arrow 12.2
    Average value in the tests
  • Faster write speed, GB/s
    8.2 left arrow 6.9
    Average value in the tests
Hynix Semiconductor (Hyundai Electronics) HMT451U6AFR8A-PB 4GB Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT451U6AFR8A-PB 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    29 left arrow 43
    Around -48% lower latency

Specifications

Complete list of technical specifications
Samsung M378B5173QH0-CK0 4GB
Hynix Semiconductor (Hyundai Electronics) HMT451U6AFR8A-PB 4GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR3
  • Latency in PassMark, ns
    43 left arrow 29
  • Read speed, GB/s
    13.9 left arrow 12.2
  • Write speed, GB/s
    8.2 left arrow 6.9
  • Memory bandwidth, mbps
    12800 left arrow 12800
Other
  • Description
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 9-9-9-24 / 1600 MHz
  • Ranking PassMark (The more the better)
    2216 left arrow 2046

Samsung M378B5173QH0-CK0 4GB RAM comparisons

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Hynix Semiconductor (Hyundai Electronics) HMT451U6AFR8A-PB 4GB RAM comparisons

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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

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