Samsung M379B5273CH0-CH9 4GB
SK Hynix HMT451U6BFR8C-PB 4GB

Samsung M379B5273CH0-CH9 4GB vs SK Hynix HMT451U6BFR8C-PB 4GB

Overall score
star star star star star
Samsung M379B5273CH0-CH9 4GB

Samsung M379B5273CH0-CH9 4GB

Overall score
star star star star star
SK Hynix HMT451U6BFR8C-PB 4GB

SK Hynix HMT451U6BFR8C-PB 4GB

Differences

  • Below the latency in the PassMark tests, ns
    27 left arrow 42
    Around 36% lower latency
  • Faster reading speed, GB/s
    14.2 left arrow 13
    Average value in the tests
  • Faster write speed, GB/s
    8.4 left arrow 8.0
    Average value in the tests
  • Higher memory bandwidth, mbps
    12800 left arrow 10600
    Around 1.21 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M379B5273CH0-CH9 4GB
SK Hynix HMT451U6BFR8C-PB 4GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR3
  • Latency in PassMark, ns
    27 left arrow 42
  • Read speed, GB/s
    13.0 left arrow 14.2
  • Write speed, GB/s
    8.0 left arrow 8.4
  • Memory bandwidth, mbps
    10600 left arrow 12800
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 9-9-9-24 / 1600 MHz
  • Ranking PassMark (The more the better)
    2318 left arrow 2231
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

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