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Samsung M391B5673EH1-CH9 2GB
Micron Technology 8KTF51264AZ-1G9P1 4GB
Compare
Samsung M391B5673EH1-CH9 2GB vs Micron Technology 8KTF51264AZ-1G9P1 4GB
Overall score
Samsung M391B5673EH1-CH9 2GB
Overall score
Micron Technology 8KTF51264AZ-1G9P1 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M391B5673EH1-CH9 2GB
Report a bug
Below the latency in the PassMark tests, ns
26
27
Around 4% lower latency
Reasons to consider
Micron Technology 8KTF51264AZ-1G9P1 4GB
Report a bug
Faster reading speed, GB/s
15
12.8
Average value in the tests
Faster write speed, GB/s
9.6
9.0
Average value in the tests
Higher memory bandwidth, mbps
14900
10600
Around 1.41 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M391B5673EH1-CH9 2GB
Micron Technology 8KTF51264AZ-1G9P1 4GB
Main characteristics
Memory type
DDR3
DDR3
Latency in PassMark, ns
26
27
Read speed, GB/s
12.8
15.0
Write speed, GB/s
9.0
9.6
Memory bandwidth, mbps
10600
14900
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC3-14900, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 13
Timings / Clock speed
7-7-7-20 / 1333 MHz
9-10-9-28 / 1866 MHz
Ranking PassMark (The more the better)
2143
2306
Samsung M391B5673EH1-CH9 2GB RAM comparisons
Micron Technology 9JSF25672AZ-1G6M1 2GB
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Micron Technology 8KTF51264AZ-1G9P1 4GB RAM comparisons
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
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Absolute Latency
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RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
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Absolute Latency
0 ns
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