Samsung M391B5673EH1-CH9 2GB
Micron Technology 8KTF51264AZ-1G9P1 4GB

Samsung M391B5673EH1-CH9 2GB vs Micron Technology 8KTF51264AZ-1G9P1 4GB

Overall score
star star star star star
Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Overall score
star star star star star
Micron Technology 8KTF51264AZ-1G9P1 4GB

Micron Technology 8KTF51264AZ-1G9P1 4GB

Differences

  • Below the latency in the PassMark tests, ns
    26 left arrow 27
    Around 4% lower latency
  • Faster reading speed, GB/s
    15 left arrow 12.8
    Average value in the tests
  • Faster write speed, GB/s
    9.6 left arrow 9.0
    Average value in the tests
  • Higher memory bandwidth, mbps
    14900 left arrow 10600
    Around 1.41 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M391B5673EH1-CH9 2GB
Micron Technology 8KTF51264AZ-1G9P1 4GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR3
  • Latency in PassMark, ns
    26 left arrow 27
  • Read speed, GB/s
    12.8 left arrow 15.0
  • Write speed, GB/s
    9.0 left arrow 9.6
  • Memory bandwidth, mbps
    10600 left arrow 14900
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC3-14900, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 13
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 9-10-9-28 / 1866 MHz
  • Ranking PassMark (The more the better)
    2143 left arrow 2306
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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