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Samsung M4 70T2953EZ3-CE6 1GB
Micron Technology 4ATF51264AZ-3G2E1 4GB

Samsung M4 70T2953EZ3-CE6 1GB vs Micron Technology 4ATF51264AZ-3G2E1 4GB

Overall score
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Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

Overall score
star star star star star
Micron Technology 4ATF51264AZ-3G2E1 4GB

Micron Technology 4ATF51264AZ-3G2E1 4GB

Differences Specifications Comments

Differences

Samsung M4 70T2953EZ3-CE6 1GB Reasons to consider
Samsung M4 70T2953EZ3-CE6 1GB
Report a bug
  • Faster reading speed, GB/s
    3 left arrow 17.5
    Average value in the tests
Micron Technology 4ATF51264AZ-3G2E1 4GB Reasons to consider
Micron Technology 4ATF51264AZ-3G2E1 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    48 left arrow 73
    Around -52% lower latency
  • Faster write speed, GB/s
    8.3 left arrow 1,423.3
    Average value in the tests
  • Higher memory bandwidth, mbps
    25600 left arrow 5300
    Around 4.83 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M4 70T2953EZ3-CE6 1GB
Micron Technology 4ATF51264AZ-3G2E1 4GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    73 left arrow 48
  • Read speed, GB/s
    3,510.5 left arrow 17.5
  • Write speed, GB/s
    1,423.3 left arrow 8.3
  • Memory bandwidth, mbps
    5300 left arrow 25600
Other
  • Description
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
  • Timings / Clock speed
    5-5-5-15 / 667 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • Ranking PassMark (The more the better)
    476 left arrow 2196

Samsung M4 70T2953EZ3-CE6 1GB RAM comparisons

Samsung M4 70T2864EH3-CF7 1GB
G Skill Intl F4-2400C15-4GRB 4GB

Micron Technology 4ATF51264AZ-3G2E1 4GB RAM comparisons

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2

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