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Samsung M4 70T5663QZ3-CE6 2GB
G Skill Intl F4-2666C15-4GVK 4GB

Samsung M4 70T5663QZ3-CE6 2GB vs G Skill Intl F4-2666C15-4GVK 4GB

Overall score
star star star star star
Samsung M4 70T5663QZ3-CE6 2GB

Samsung M4 70T5663QZ3-CE6 2GB

Overall score
star star star star star
G Skill Intl F4-2666C15-4GVK 4GB

G Skill Intl F4-2666C15-4GVK 4GB

Differences Specifications Comments

Differences

Samsung M4 70T5663QZ3-CE6 2GB Reasons to consider
Samsung M4 70T5663QZ3-CE6 2GB
Report a bug
  • Faster reading speed, GB/s
    3 left arrow 15.9
    Average value in the tests
G Skill Intl F4-2666C15-4GVK 4GB Reasons to consider
G Skill Intl F4-2666C15-4GVK 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    24 left arrow 68
    Around -183% lower latency
  • Faster write speed, GB/s
    11.8 left arrow 1,702.6
    Average value in the tests
  • Higher memory bandwidth, mbps
    17000 left arrow 5300
    Around 3.21 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M4 70T5663QZ3-CE6 2GB
G Skill Intl F4-2666C15-4GVK 4GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    68 left arrow 24
  • Read speed, GB/s
    3,886.6 left arrow 15.9
  • Write speed, GB/s
    1,702.6 left arrow 11.8
  • Memory bandwidth, mbps
    5300 left arrow 17000
Other
  • Description
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • Timings / Clock speed
    5-5-5-15 / 667 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    654 left arrow 2508

Samsung M4 70T5663QZ3-CE6 2GB RAM comparisons

SK Hynix HYMP125U64CP8-S6 2GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

G Skill Intl F4-2666C15-4GVK 4GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
TwinMOS 8DPT5MK8-TATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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