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Samsung M4 70T5663QZ3-CE6 2GB
Micron Technology 8ATF1G64AZ-3G2R1 8GB
Compare
Samsung M4 70T5663QZ3-CE6 2GB vs Micron Technology 8ATF1G64AZ-3G2R1 8GB
Overall score
Samsung M4 70T5663QZ3-CE6 2GB
Overall score
Micron Technology 8ATF1G64AZ-3G2R1 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M4 70T5663QZ3-CE6 2GB
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Faster reading speed, GB/s
3
16.9
Average value in the tests
Reasons to consider
Micron Technology 8ATF1G64AZ-3G2R1 8GB
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Below the latency in the PassMark tests, ns
31
68
Around -119% lower latency
Faster write speed, GB/s
12.4
1,702.6
Average value in the tests
Specifications
Complete list of technical specifications
Samsung M4 70T5663QZ3-CE6 2GB
Micron Technology 8ATF1G64AZ-3G2R1 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
68
31
Read speed, GB/s
3,886.6
16.9
Write speed, GB/s
1,702.6
12.4
Memory bandwidth, mbps
5300
no data
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
, 1.20000005, CAS Supported:
Timings / Clock speed
5-5-5-15 / 667 MHz
no data
Ranking PassMark (The more the better)
654
3043
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
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Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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