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Samsung M4 70T5663QZ3-CE6 2GB
Micron Technology 8ATF1G64AZ-3G2R1 8GB

Samsung M4 70T5663QZ3-CE6 2GB vs Micron Technology 8ATF1G64AZ-3G2R1 8GB

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Samsung M4 70T5663QZ3-CE6 2GB

Samsung M4 70T5663QZ3-CE6 2GB

Punteggio complessivo
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Micron Technology 8ATF1G64AZ-3G2R1 8GB

Micron Technology 8ATF1G64AZ-3G2R1 8GB

Differenze Specifiche tecniche Commenti

Differenze

Samsung M4 70T5663QZ3-CE6 2GB Motivi da considerare
Samsung M4 70T5663QZ3-CE6 2GB
Segnala un bug
  • Velocità di lettura più elevata, GB/s
    3 left arrow 16.9
    Valore medio nei test
Micron Technology 8ATF1G64AZ-3G2R1 8GB Motivi da considerare
Micron Technology 8ATF1G64AZ-3G2R1 8GB
Segnala un bug
  • Al di sotto della latenza nei test PassMark, ns
    31 left arrow 68
    Intorno -119% latenza inferiore
  • Velocità di scrittura più elevata, GB/s
    12.4 left arrow 1,702.6
    Valore medio nei test

Specifiche tecniche

Elenco completo delle specifiche tecniche
Samsung M4 70T5663QZ3-CE6 2GB
Micron Technology 8ATF1G64AZ-3G2R1 8GB
Caratteristiche principali
  • Tipo di memoria
    DDR2 left arrow DDR4
  • Latenza in PassMark, ns
    68 left arrow 31
  • Velocità di lettura, GB/s
    3,886.6 left arrow 16.9
  • Velocità di scrittura, GB/s
    1,702.6 left arrow 12.4
  • Larghezza di banda della memoria, mbps
    5300 left arrow no data
Other
  • Descrizione
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow , 1.20000005, CAS Supported:
  • Temporizzazioni / Velocità di clock
    5-5-5-15 / 667 MHz left arrow no data
  • Classifica PassMark (più sono, meglio è)
    654 left arrow 3043

Samsung M4 70T5663QZ3-CE6 2GB Confronto tra le RAM

SK Hynix HYMP125U64CP8-S6 2GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Micron Technology 8ATF1G64AZ-3G2R1 8GB Confronto tra le RAM

V-Color Technology Inc. TL48G30S8KSRGB15 8GB
SK Hynix HMA851U6JJR6N-VK 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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Ultimi confronti

Samsung M4 70T5663QZ3-CE6 2GB
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Micron Technology 8ATF1G64AZ-3G2R1 8GB
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