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Samsung M471B1G73DB0-YK0 8GB
Micron Technology 8KTF51264HZ-1G6E1 4GB
Compare
Samsung M471B1G73DB0-YK0 8GB vs Micron Technology 8KTF51264HZ-1G6E1 4GB
Overall score
Samsung M471B1G73DB0-YK0 8GB
Overall score
Micron Technology 8KTF51264HZ-1G6E1 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M471B1G73DB0-YK0 8GB
Report a bug
Below the latency in the PassMark tests, ns
45
46
Around 2% lower latency
Faster write speed, GB/s
8.1
7.5
Average value in the tests
Reasons to consider
Micron Technology 8KTF51264HZ-1G6E1 4GB
Report a bug
Faster reading speed, GB/s
12
11.9
Average value in the tests
Specifications
Complete list of technical specifications
Samsung M471B1G73DB0-YK0 8GB
Micron Technology 8KTF51264HZ-1G6E1 4GB
Main characteristics
Memory type
DDR3
DDR3
Latency in PassMark, ns
45
46
Read speed, GB/s
11.9
12.0
Write speed, GB/s
8.1
7.5
Memory bandwidth, mbps
12800
12800
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
Timings / Clock speed
9-9-9-24 / 1600 MHz
9-9-9-24 / 1600 MHz
Ranking PassMark (The more the better)
2077
1959
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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Absolute Latency
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RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
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Absolute Latency
0 ns
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