Samsung M471B1G73DB0-YK0 8GB vs Micron Technology 8KTF51264HZ-1G6E1 4GB

Pontuação geral

Samsung M471B1G73DB0-YK0 8GB

Samsung M471B1G73DB0-YK0 8GB

Pontuação geral

Micron Technology 8KTF51264HZ-1G6E1 4GB

Micron Technology 8KTF51264HZ-1G6E1 4GB

Diferenças Especificações Comentários

Diferenças

Samsung M471B1G73DB0-YK0 8GB

Razões a considerar
Samsung M471B1G73DB0-YK0 8GB

Relatar um erro

Abaixo da latência nos testes do PassMark, ns

45 46

Por volta de 2% menor latência
Velocidade de escrita mais rápida, GB/s

8.1 7.5

Valor médio nos testes

Micron Technology 8KTF51264HZ-1G6E1 4GB

Razões a considerar
Micron Technology 8KTF51264HZ-1G6E1 4GB

Relatar um erro

Velocidade de leitura mais rápida, GB/s

12 11.9

Valor médio nos testes

Especificações

Lista completa de especificações técnicas

Samsung M471B1G73DB0-YK0 8GB

Micron Technology 8KTF51264HZ-1G6E1 4GB

Características principais

Tipo de memória

DDR3 DDR3
Latência em PassMark, ns

45 46
Velocidade de leitura, GB/s

11.9 12.0
Velocidade de escrita, GB/s

8.1 7.5
Largura de banda de memória, mbps

12800 12800

Other

Descrição

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
Tempos / Velocidade do relógio

9-9-9-24 / 1600 MHz 9-9-9-24 / 1600 MHz
Ranking PassMark (Quanto mais, melhor)

2077 1959

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

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