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Samsung M471B1G73DB0-YK0 8GB
Micron Technology 8KTF51264HZ-1G6E1 4GB

Samsung M471B1G73DB0-YK0 8GB vs Micron Technology 8KTF51264HZ-1G6E1 4GB

Overall score
star star star star star
Samsung M471B1G73DB0-YK0 8GB

Samsung M471B1G73DB0-YK0 8GB

Overall score
star star star star star
Micron Technology 8KTF51264HZ-1G6E1 4GB

Micron Technology 8KTF51264HZ-1G6E1 4GB

Differences Specifications Comments

Differences

Samsung M471B1G73DB0-YK0 8GB Reasons to consider
Samsung M471B1G73DB0-YK0 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    45 left arrow 46
    Around 2% lower latency
  • Faster write speed, GB/s
    8.1 left arrow 7.5
    Average value in the tests
Micron Technology 8KTF51264HZ-1G6E1 4GB Reasons to consider
Micron Technology 8KTF51264HZ-1G6E1 4GB
Report a bug
  • Faster reading speed, GB/s
    12 left arrow 11.9
    Average value in the tests

Specifications

Complete list of technical specifications
Samsung M471B1G73DB0-YK0 8GB
Micron Technology 8KTF51264HZ-1G6E1 4GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR3
  • Latency in PassMark, ns
    45 left arrow 46
  • Read speed, GB/s
    11.9 left arrow 12.0
  • Write speed, GB/s
    8.1 left arrow 7.5
  • Memory bandwidth, mbps
    12800 left arrow 12800
Other
  • Description
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 9-9-9-24 / 1600 MHz
  • Ranking PassMark (The more the better)
    2077 left arrow 1959

Samsung M471B1G73DB0-YK0 8GB RAM comparisons

Crucial Technology CT102464BF160B.C16 8GB
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Micron Technology 8KTF51264HZ-1G6E1 4GB RAM comparisons

Micron Technology 8KTF51264HZ-1G9P1 4GB
Crucial Technology BLS8G4D240FSB.16FAR 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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