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Samsung M471B5173EB0-YK0 4GB
Hynix Semiconductor (Hyundai Electronics) QUM3U-8G1600C11 8GB

Samsung M471B5173EB0-YK0 4GB vs Hynix Semiconductor (Hyundai Electronics) QUM3U-8G1600C11 8GB

Overall score
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Samsung M471B5173EB0-YK0 4GB

Samsung M471B5173EB0-YK0 4GB

Overall score
star star star star star
Hynix Semiconductor (Hyundai Electronics) QUM3U-8G1600C11 8GB

Hynix Semiconductor (Hyundai Electronics) QUM3U-8G1600C11 8GB

Differences Specifications Comments

Differences

Samsung M471B5173EB0-YK0 4GB Reasons to consider
Samsung M471B5173EB0-YK0 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    44 left arrow 67
    Around 34% lower latency
  • Faster reading speed, GB/s
    13 left arrow 6.2
    Average value in the tests
  • Faster write speed, GB/s
    8.2 left arrow 3.4
    Average value in the tests
Hynix Semiconductor (Hyundai Electronics) QUM3U-8G1600C11 8GB Reasons to consider
Hynix Semiconductor (Hyundai Electronics) QUM3U-8G1600C11 8GB
Report a bug

Specifications

Complete list of technical specifications
Samsung M471B5173EB0-YK0 4GB
Hynix Semiconductor (Hyundai Electronics) QUM3U-8G1600C11 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR3
  • Latency in PassMark, ns
    44 left arrow 67
  • Read speed, GB/s
    13.0 left arrow 6.2
  • Write speed, GB/s
    8.2 left arrow 3.4
  • Memory bandwidth, mbps
    12800 left arrow 12800
Other
  • Description
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 9-9-9-24 / 1600 MHz
  • Ranking PassMark (The more the better)
    2069 left arrow 1076

Samsung M471B5173EB0-YK0 4GB RAM comparisons

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Hynix Semiconductor (Hyundai Electronics) QUM3U-8G1600C11 8GB RAM comparisons

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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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