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Samsung M471B5273DH0-CK0 4GB
Micron Technology 16JSF51264HZ-1G4D1 4GB
Compare
Samsung M471B5273DH0-CK0 4GB vs Micron Technology 16JSF51264HZ-1G4D1 4GB
Overall score
Samsung M471B5273DH0-CK0 4GB
Overall score
Micron Technology 16JSF51264HZ-1G4D1 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M471B5273DH0-CK0 4GB
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Below the latency in the PassMark tests, ns
41
43
Around 5% lower latency
Faster reading speed, GB/s
13.3
10.5
Average value in the tests
Faster write speed, GB/s
9.0
6.8
Average value in the tests
Higher memory bandwidth, mbps
12800
10600
Around 1.21% higher bandwidth
Reasons to consider
Micron Technology 16JSF51264HZ-1G4D1 4GB
Report a bug
Specifications
Complete list of technical specifications
Samsung M471B5273DH0-CK0 4GB
Micron Technology 16JSF51264HZ-1G4D1 4GB
Main characteristics
Memory type
DDR3
DDR3
Latency in PassMark, ns
41
43
Read speed, GB/s
13.3
10.5
Write speed, GB/s
9.0
6.8
Memory bandwidth, mbps
12800
10600
Other
Description
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10
Timings / Clock speed
9-9-9-24 / 1600 MHz
7-7-7-20 / 1333 MHz
Ranking PassMark (The more the better)
2016
1682
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
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Absolute Latency
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RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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