Samsung M471B5273DH0-CK0 4GB
Micron Technology 16JSF51264HZ-1G4D1 4GB

Samsung M471B5273DH0-CK0 4GB vs Micron Technology 16JSF51264HZ-1G4D1 4GB

Overall score
star star star star star
Samsung M471B5273DH0-CK0 4GB

Samsung M471B5273DH0-CK0 4GB

Overall score
star star star star star
Micron Technology 16JSF51264HZ-1G4D1 4GB

Micron Technology 16JSF51264HZ-1G4D1 4GB

Differences

  • Below the latency in the PassMark tests, ns
    41 left arrow 43
    Around 5% lower latency
  • Faster reading speed, GB/s
    13.3 left arrow 10.5
    Average value in the tests
  • Faster write speed, GB/s
    9.0 left arrow 6.8
    Average value in the tests
  • Higher memory bandwidth, mbps
    12800 left arrow 10600
    Around 1.21% higher bandwidth

Specifications

Complete list of technical specifications
Samsung M471B5273DH0-CK0 4GB
Micron Technology 16JSF51264HZ-1G4D1 4GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR3
  • Latency in PassMark, ns
    41 left arrow 43
  • Read speed, GB/s
    13.3 left arrow 10.5
  • Write speed, GB/s
    9.0 left arrow 6.8
  • Memory bandwidth, mbps
    12800 left arrow 10600
Other
  • Description
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 7-7-7-20 / 1333 MHz
  • Ranking PassMark (The more the better)
    2016 left arrow 1682
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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