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Samsung M471B5673FH0-CF8 2GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6AFR8A-PB 8GB
Compare
Samsung M471B5673FH0-CF8 2GB vs Hynix Semiconductor (Hyundai Electronics) HMT41GS6AFR8A-PB 8GB
Overall score
Samsung M471B5673FH0-CF8 2GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMT41GS6AFR8A-PB 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M471B5673FH0-CF8 2GB
Report a bug
Below the latency in the PassMark tests, ns
30
31
Around 3% lower latency
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT41GS6AFR8A-PB 8GB
Report a bug
Faster reading speed, GB/s
11.3
10.6
Average value in the tests
Faster write speed, GB/s
8.0
6.8
Average value in the tests
Higher memory bandwidth, mbps
12800
8500
Around 1.51 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M471B5673FH0-CF8 2GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6AFR8A-PB 8GB
Main characteristics
Memory type
DDR3
DDR3
Latency in PassMark, ns
30
31
Read speed, GB/s
10.6
11.3
Write speed, GB/s
6.8
8.0
Memory bandwidth, mbps
8500
12800
Other
Description
PC3-8500, 1.5V, CAS Supported: 5 6 7 8
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
Timings / Clock speed
7-7-7-20 / 1066 MHz
9-9-9-24 / 1600 MHz
Ranking PassMark (The more the better)
1479
2066
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
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Absolute Latency
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RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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