SK Hynix HYMP125S64CP8-S6 2GB
Samsung M4 70T5663EH3-CF7 2GB

SK Hynix HYMP125S64CP8-S6 2GB vs Samsung M4 70T5663EH3-CF7 2GB

Overall score
star star star star star
SK Hynix HYMP125S64CP8-S6 2GB

SK Hynix HYMP125S64CP8-S6 2GB

Overall score
star star star star star
Samsung M4 70T5663EH3-CF7 2GB

Samsung M4 70T5663EH3-CF7 2GB

Differences

  • Faster reading speed, GB/s
    4 left arrow 4
    Average value in the tests
  • Faster write speed, GB/s
    2,013.5 left arrow 1,906.1
    Average value in the tests
  • Below the latency in the PassMark tests, ns
    66 left arrow 68
    Around -3% lower latency

Specifications

Complete list of technical specifications
SK Hynix HYMP125S64CP8-S6 2GB
Samsung M4 70T5663EH3-CF7 2GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR2
  • Latency in PassMark, ns
    68 left arrow 66
  • Read speed, GB/s
    4,402.8 left arrow 4,323.0
  • Write speed, GB/s
    2,013.5 left arrow 1,906.1
  • Memory bandwidth, mbps
    6400 left arrow 6400
Other
  • Description
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
  • Timings / Clock speed
    5-5-5-15 / 800 MHz left arrow 5-5-5-15 / 800 MHz
  • Ranking PassMark (The more the better)
    701 left arrow 703
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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