SK Hynix HYMP125S64CP8-S6 2GB vs Samsung M4 70T5663EH3-CF7 2GB

Pontuação geral

SK Hynix HYMP125S64CP8-S6 2GB

SK Hynix HYMP125S64CP8-S6 2GB

Pontuação geral

Samsung M4 70T5663EH3-CF7 2GB

Samsung M4 70T5663EH3-CF7 2GB

Diferenças Especificações Comentários

Diferenças

SK Hynix HYMP125S64CP8-S6 2GB

Razões a considerar
SK Hynix HYMP125S64CP8-S6 2GB

Relatar um erro

Velocidade de leitura mais rápida, GB/s

4 4

Valor médio nos testes
Velocidade de escrita mais rápida, GB/s

2,013.5 1,906.1

Valor médio nos testes

Samsung M4 70T5663EH3-CF7 2GB

Razões a considerar
Samsung M4 70T5663EH3-CF7 2GB

Relatar um erro

Abaixo da latência nos testes do PassMark, ns

66 68

Por volta de -3% menor latência

Especificações

Lista completa de especificações técnicas

SK Hynix HYMP125S64CP8-S6 2GB

Samsung M4 70T5663EH3-CF7 2GB

Características principais

Tipo de memória

DDR2 DDR2
Latência em PassMark, ns

68 66
Velocidade de leitura, GB/s

4,402.8 4,323.0
Velocidade de escrita, GB/s

2,013.5 1,906.1
Largura de banda de memória, mbps

6400 6400

Other

Descrição

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
Tempos / Velocidade do relógio

5-5-5-15 / 800 MHz 5-5-5-15 / 800 MHz
Ranking PassMark (Quanto mais, melhor)

701 703

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

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