RAM comparison Hynix Semiconductor (Hyundai Electronics) HMT325S6CFR8C-PB 2GB vs Samsung M471B5773CHS-CH9 2GB

Hynix Semiconductor (Hyundai Electronics) HMT325S6CFR8C-PB 2GB vs Samsung M471B5773CHS-CH9 2GB

Overall score

Hynix Semiconductor (Hyundai Electronics) HMT325S6CFR8C-PB 2GB

Overall score

Differences Specifications Comments

Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT325S6CFR8C-PB 2GB

Below the latency in the PassMark tests, ns

30 31

Around 3% lower latency
Faster reading speed, GB/s

11.4 9.8

Average value in the tests
Faster write speed, GB/s

7.9 6.7

Average value in the tests
Higher memory bandwidth, mbps

12800 10600

Around 1.21% higher bandwidth

Reasons to consider
Samsung M471B5773CHS-CH9 2GB

Complete list of technical specifications

Hynix Semiconductor (Hyundai Electronics) HMT325S6CFR8C-PB 2GB

Samsung M471B5773CHS-CH9 2GB

Main characteristics

Other

Description

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
Timings / Clock speed

9-9-9-24 / 1600 MHz 7-7-7-20 / 1333 MHz
Ranking PassMark (The more the better)

1762 1304

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

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