Hynix Semiconductor (Hyundai Electronics) HMT325S6CFR8C-PB 2GB vs Samsung M471B5773CHS-CH9 2GB

総合得点

Hynix Semiconductor (Hyundai Electronics) HMT325S6CFR8C-PB 2GB

Hynix Semiconductor (Hyundai Electronics) HMT325S6CFR8C-PB 2GB

総合得点

Samsung M471B5773CHS-CH9 2GB

Samsung M471B5773CHS-CH9 2GB

相違点仕様コメント

相違点

Hynix Semiconductor (Hyundai Electronics) HMT325S6CFR8C-PB 2GB

考慮すべき理由
Hynix Semiconductor (Hyundai Electronics) HMT325S6CFR8C-PB 2GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

30 31

周辺 3% 低遅延
読み出し速度の高速化、GB/s

11.4 9.8

テスト平均値
書き込み速度の高速化、GB/s

7.9 6.7

テスト平均値
より高いメモリ帯域幅、mbps

12800 10600

周辺 1.21% 高帯域

Samsung M471B5773CHS-CH9 2GB

考慮すべき理由
Samsung M471B5773CHS-CH9 2GB

バグを報告する

仕様

技術仕様の完全リスト

Hynix Semiconductor (Hyundai Electronics) HMT325S6CFR8C-PB 2GB

Samsung M471B5773CHS-CH9 2GB

主な特徴

メモリータイプ

DDR3 DDR3
PassMarkにおけるレイテンシー、ns

30 31
読み出し速度、GB/s

11.4 9.8
書き込み速度、GB/秒

7.9 6.7
メモリ帯域幅、mbps

12800 10600

Other

商品説明

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
タイミング / クロック速度

9-9-9-24 / 1600 MHz 7-7-7-20 / 1333 MHz
ランキングPassMark（多ければ多いほど良い）

1762 1304

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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