Hynix Semiconductor (Hyundai Electronics) HMT325S6CFR8C-PB 2GB vs Samsung M471B5773CHS-CH9 2GB

总分

Hynix Semiconductor (Hyundai Electronics) HMT325S6CFR8C-PB 2GB

Hynix Semiconductor (Hyundai Electronics) HMT325S6CFR8C-PB 2GB

总分

Samsung M471B5773CHS-CH9 2GB

Samsung M471B5773CHS-CH9 2GB

差异规格评论

差异

Hynix Semiconductor (Hyundai Electronics) HMT325S6CFR8C-PB 2GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT325S6CFR8C-PB 2GB

报告一个错误

低于PassMark测试中的延时，ns

30 31

左右 3% 更低的延时
更快的读取速度，GB/s

11.4 9.8

测试中的平均数值
更快的写入速度，GB/s

7.9 6.7

测试中的平均数值
更高的内存带宽，mbps

12800 10600

左右 1.21% 更高的带宽

Samsung M471B5773CHS-CH9 2GB

需要考虑的原因
Samsung M471B5773CHS-CH9 2GB

报告一个错误

规格

完整的技术规格清单

Hynix Semiconductor (Hyundai Electronics) HMT325S6CFR8C-PB 2GB

Samsung M471B5773CHS-CH9 2GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

30 31
读取速度，GB/s

11.4 9.8
写入速度，GB/s

7.9 6.7
内存带宽，mbps

12800 10600

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
时序/时钟速度

9-9-9-24 / 1600 MHz 7-7-7-20 / 1333 MHz
排名PassMark (越多越好)

1762 1304

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Hynix Semiconductor (Hyundai Electronics) HMT325S6CFR8C-PB 2GB

Hynix Semiconductor (Hyundai Electronics) HMT325S6CFR8C

Samsung M471B5773CHS-CH9 2GB

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Gold Key Technology Co Ltd NMGD416E82-4400G 16GB

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Chun Well Technology Holding Limited MD4U1632161DCW 16GB

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