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Hynix Semiconductor (Hyundai Electronics) HMT351R7EFR4A-H9 4GB
Golden Empire CL16-18-18 D4-3200 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) HMT351R7EFR4A-H9 4GB vs Golden Empire CL16-18-18 D4-3200 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMT351R7EFR4A-H9 4GB
Overall score
Golden Empire CL16-18-18 D4-3200 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT351R7EFR4A-H9 4GB
Report a bug
Reasons to consider
Golden Empire CL16-18-18 D4-3200 8GB
Report a bug
Below the latency in the PassMark tests, ns
28
46
Around -64% lower latency
Faster reading speed, GB/s
18.2
4.8
Average value in the tests
Faster write speed, GB/s
14.2
4.5
Average value in the tests
Higher memory bandwidth, mbps
17000
10600
Around 1.6 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT351R7EFR4A-H9 4GB
Golden Empire CL16-18-18 D4-3200 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
46
28
Read speed, GB/s
4.8
18.2
Write speed, GB/s
4.5
14.2
Memory bandwidth, mbps
10600
17000
Other
Description
PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10
PC4-17000, 1.2V, CAS Supported: 14 15 16
Timings / Clock speed
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
1046
3463
Hynix Semiconductor (Hyundai Electronics) HMT351R7EFR4A-H9 4GB RAM comparisons
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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Absolute Latency
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RAM 2
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