RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Kingston HP536727-H41-ELD 4GB
Hynix Semiconductor (Hyundai Electronics) HMT325S6EFR8A-PB 2GB
Compare
Kingston HP536727-H41-ELD 4GB vs Hynix Semiconductor (Hyundai Electronics) HMT325S6EFR8A-PB 2GB
Overall score
Kingston HP536727-H41-ELD 4GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMT325S6EFR8A-PB 2GB
Differences
Specifications
Comments
Differences
Reasons to consider
Kingston HP536727-H41-ELD 4GB
Report a bug
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT325S6EFR8A-PB 2GB
Report a bug
Below the latency in the PassMark tests, ns
26
51
Around -96% lower latency
Faster reading speed, GB/s
13.4
11.6
Average value in the tests
Faster write speed, GB/s
8.5
8.1
Average value in the tests
Specifications
Complete list of technical specifications
Kingston HP536727-H41-ELD 4GB
Hynix Semiconductor (Hyundai Electronics) HMT325S6EFR8A-PB 2GB
Main characteristics
Memory type
DDR3
DDR3
Latency in PassMark, ns
51
26
Read speed, GB/s
11.6
13.4
Write speed, GB/s
8.1
8.5
Memory bandwidth, mbps
12800
12800
Other
Description
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
Timings / Clock speed
9-9-9-24 / 1600 MHz
9-9-9-24 / 1600 MHz
Ranking PassMark (The more the better)
1540
1836
Kingston HP536727-H41-ELD 4GB RAM comparisons
GIGA - BYTE Technology Co Ltd GP-ARS16G37 8GB
Hynix Semiconductor (Hyundai Electronics) HMT325S6EFR8A-PB 2GB RAM comparisons
A-DATA Technology AD73I1B1672EG 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
TwinMOS 8DPT5MK8-TATP 2GB
Crucial Technology CT4G4SFS8213.C8FBD2 4GB
Kingston HP536727-H41-ELD 4GB
Hynix Semiconductor (Hyundai Electronics) HMT325S6EFR8A
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Swissbit MEN02G64D2BE2MT-25 2GB
Samsung M3 78T5663RZ3-CE6 2GB
Corsair CM4X16GC3000C16K8 16GB
Smart Modular SG564568FG8N6KF-Z2 2GB
ADVAN Inc AM42E28UD04T-NVL 4GB
Kingston 99U5403-036.A00G 4GB
Corsair CMV8GX4M1A2666C18 8GB
Kingston KHX2133C11D3/4GX 4GB
G Skill Intl F4-3600C17-4GVK 4GB
Samsung M3 78T2863EHS-CF7 1GB
G Skill Intl F4-3600C14-8GTZNB 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT16G4DFD824A.M16FA 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
SK Hynix HMA82GS6DJR8N-XN 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMWX8GF2666C16W4 8GB
PNY Electronics PNY 2GB
Crucial Technology BLM8G44C19U4B.M8FE1 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-3200C16-8GVGB 8GB
G Skill Intl F5-6400J3239G16G 16GB
Patriot Memory (PDP Systems) 4400 C19 Series 8GB
Report a bug
×
Bug description
Source link